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Enhanced DC-operated electroluminescence of forwardly aligned p/MQW/n InGaN nanorod LEDs via DC offset-AC dielectrophoresis
작성자 나노화학 연구실 작성일 2018-03-05 조회수 524
저자: Yun Jae Eo, Gang Yeol Yoo, Hyelim Kang, Youngki Lee, Chan Sik Kim, Ji Hye Oh, Keyong Nam Lee, Woong Kim and Young Rag Do 게재정보: ACS Appl. Mater. Interface 2017, 9, 37912-37920

  • We introduce the orientation-controlled alignment process of p-GaN/InGaN multi quantum-well/n-GaN (p/MQW/n InGaN) nanorod light-emitting diodes (LEDs) by applying direct-current (DC) offset alternating-current (AC) or pulsed DC electric fields across interdigitated metal electrodes. The as-forwardly-aligned p/MQW/n InGaN nanorod LEDs by pulsed DC dielectrophoresis (DEP) assembled process improve electroluminescence (EL) intensities by 1.8 time compared to conventional AC DEP assembly under DC electric field operation, and exhibit the enhanced applied current, the EL brightness in their current-voltage and EL intensity-voltage curves that can be directly used as fundamental data to construct DC-operated nanorod LED devices, such as LED areal surface lightings or pixels of LED displays. The enhancement of applied current, the improved EL intensity and the increased number of forwardly aligned p/MQW/n InGaN nanorods in panchromatic cathodoluminescence (CL) images confirm the considerable enhancement of forwardly aligned 1D nanorod LEDs between two opposite electrodes using DC-offset AC or pulsed DC electric field DEP assembly process. These DC offset AC or pulsed DC electric field DEP assembly process suggests that designing for these interactions could yield new ways to control the orientation of asymmetric p/MQW/n InGaN diode-typed LED nanorods having a relatively low aspect ratio.
     


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